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TC1014/TC1015/TC1185
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass
Features:
* Low Supply Current (50 A, typical) * Low Dropout Voltage * Choice of 50 mA (TC1014), 100 mA (TC1015) and 150 mA (TC1185) Output * High Output Voltage Accuracy * Standard or Custom Output Voltages * Power-Saving Shutdown Mode * Reference Bypass Input for Ultra Low-Noise Operation * Overcurrent and Overtemperature Protection * Space-Saving 5-Pin SOT-23 Package * Pin-Compatible Upgrades for Bipolar Regulators * Standard Output Voltage Options: - 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V
General Description
The TC1014/TC1015/TC1185 are high accuracy (typically 0.5%) CMOS upgrades for older (bipolar) Low Dropout Regulators (LDOs) such as the LP2980. Designed specifically for battery-operated systems, the devices' CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 50 A at full load (20 to 60 times lower than in bipolar regulators). The devices' key features include ultra low-noise operation (plus optional Bypass input), fast response to step changes in load, and very low dropout voltage, typically 85 mV (TC1014), 180 mV (TC1015), and 270 mV (TC1185) at full-load. Supply current is reduced to 0.5 A (max) and VOUT falls to zero when the shutdown input is low. The devices incorporate both overtemperature and overcurrent protection. The TC1014/TC1015/TC1185 are stable with an output capacitor of only 1 F and have a maximum output current of 50 mA, 100 mA and 150 mA, respectively. For higher output current regulators, please see the TC1107 (DS21356), TC1108 (DS21357), TC1173 (DS21362) (IOUT = 300 mA) data sheets.
Applications:
* * * * * * * Battery-Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulator for SMPS Pagers
Package Type
5-Pin SOT-23 VOUT 5
5 + 1 F
Typical Application
VIN 1 VIN TC1014 TC1015 TC1185 GND VOUT VOUT
Bypass 4
TC1014 TC1015 TC1185 1 VIN 2 3
2
3
GND SHDN
SHDN
Bypass
4 470 pF Reference Bypass Cap (Optional)
Shutdown Control (from Power Control Logic)
(c) 2007 Microchip Technology Inc.
DS21335E-page 1
TC1014/TC1015/TC1185
1.0 ELECTRICAL CHARACTERISTICS
Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
Input Voltage .........................................................6.5V Output Voltage........................... (-0.3V) to (VIN + 0.3V) Power Dissipation................Internally Limited (Note 7) Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V Operating Temperature Range...... -40C < TJ < 125C Storage Temperature..........................-65C to +150C
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications: VIN = VR + 1V, IL = 100 A, CL = 1.0 F, SHDN > VIH, TA = +25C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40C to +125C. Parameter
Input Operating Voltage Maximum Output Current
Symbol VIN IOUTMAX
Min
2.7 50 100 150 VR - 2.5% -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ
-- -- -- -- VR 0.5% 20 40 0.05 0.5 0.5 2 65 85 180 270 50 0.05 64 300 0.04 160 10
Max
6.0 -- -- -- VR + 2.5% -- -- 0c.35 2 3 -- -- 120 250 400 80 0.5 -- 450 -- -- --
Units
V mA
Device
-- TC1014 TC1015 TC1185 -- -- -- TC1014; TC1015 TC1185 -- -- -- TC1015; TC1185 TC1185 -- -- -- -- -- -- --
Test Conditions
Note 1
Output Voltage VOUT Temperature Coefficient Line Regulation Load Regulation
VOUT TCVOUT VOUT/ VIN VOUT/ VOUT VIN-VOUT
V ppm/C % %
Note 2 Note 3 (VR + 1V) VIN 6V IL = 0.1 mA to IOUTMAX IL = 0.1 mA to IOUTMAX (Note 4) IL = 100 A IL = 20 mA IL = 50 mA IL = 100 mA IL = 150 mA (Note 5) SHDN = VIH, IL = 0 SHDN = 0V FRE 1 kHz VOUT = 0V Notes 6, 7
Dropout Voltage
mV
Supply Current (Note 8) Shutdown Supply Current Power Supply Rejection Ratio Output Short Circuit Current Thermal Regulation Thermal Shutdown Die Temperature Thermal Shutdown Hysteresis
Note 1: 2: 3: 4: 5: 6: 7: 8:
IIN IINSD PSRR IOUTSC VOUT/ PD TSD TSD
A A dB mA V/W C C
The minimum VIN has to meet two conditions: VIN 2.7V and VIN VR + VDROPOUT. VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX - VOUTMIN)x 106 VOUT x T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 "Thermal Considerations" for more details. Apply for Junction Temperatures of -40C to +85C.
DS21335E-page 2
(c) 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications: VIN = VR + 1V, IL = 100 A, CL = 1.0 F, SHDN > VIH, TA = +25C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40C to +125C. Parameter
Output Noise
Symbol eN
Min
--
Typ
600
Max
--
Units
nV/Hz
Device
--
Test Conditions
IL = IOUTMAX, F = 10 kHz 470 pF from Bypass to GND VIN = 2.5V to 6.5V VIN = 2.5V to 6.5V
SHDN Input High Threshold SHDN Input Low Threshold
Note 1: 2: 3: 4: 5: 6: 7: 8:
VIH VIL
45 --
-- --
-- 15
%VIN %VIN
-- --
The minimum VIN has to meet two conditions: VIN 2.7V and VIN VR + VDROPOUT. VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX - VOUTMIN)x 106 VOUT x T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 "Thermal Considerations" for more details. Apply for Junction Temperatures of -40C to +85C.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: VIN = VR + 1V, IL = 100 A, CL = 1.0 F, SHDN > VIH, TA = +25C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40C to +125C. Parameters Temperature Ranges: Extended Temperature Range Operating Temperature Range Storage Temperature Range Thermal Package Resistances: Thermal Resistance, 5L-SOT-23 JA -- 256 -- C/W TA TA TA -40 -40 -65 -- -- -- +125 +125 +150 C C C Sym Min Typ Max Units Conditions
(c) 2007 Microchip Technology Inc.
DS21335E-page 3
TC1014/TC1015/TC1185
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise specified, all parts are measured at temperature = +25C.
Dropout Voltage vs. Temperature
0.020 0.018
Dropout Voltage vs. Temperature
0.100 DROPOUT VOLTAGE (V) 0.090 0.080 0.070 0.060 0.050 0.040 0.030 0.020 0.010 0.000
CIN = 1F COUT = 1F VOUT = 3.3V ILOAD = 50mA
DROPOUT VOLTAGE (V)
0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000
VOUT = 3.3V ILOAD = 10mA
CIN = 1F COUT = 1F -40 -20 0 20 50 TEMPERATURE (C) 70 125
-40
-20
0 20 50 TEMPERATURE (C)
70
125
FIGURE 2-1: Temperature.
0.200 0.180 DROPOUT VOLTAGE (V) 0.160 0.140 0.120 0.100 0.080 0.060 0.040 0.020 0.000
CIN = 1F COUT = 1F
Dropout Voltage vs.
FIGURE 2-4: Temperature.
Dropout Voltage vs.
Dropout Voltage vs. Temperature
0.300 DROPOUT VOLTAGE (V)
VOUT = 3.3V ILOAD = 100mA
Dropout Voltage vs. Temperature
0.250 0.200 0.150 0.100 0.050 0.000
CIN = 1F COUT = 1F VOUT = 3.3V ILOAD = 150mA
-40
-20
0 20 50 TEMPERATURE (C)
70
125
-40
-20
0 20 50 TEMPERATURE (C)
70
125
FIGURE 2-2: Temperature.
Dropout Voltage vs.
FIGURE 2-5: Temperature.
Dropout Voltage vs.
Ground Current vs. VIN
90 80 GND CURRENT (A) 70 60 50 40 30 20 10 0
CIN = 1F COUT = 1F VOUT = 3.3V ILOAD = 10mA
GND CURRENT (A)
90 80 70 60 50 40 30 20 10 0
Ground Current vs. VIN
VOUT = 3.3V ILOAD = 100mA
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V)
CIN = 1F COUT = 1F
1 1.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 3.5 4 5 5.5 7.5 VIN (V)
FIGURE 2-3: Voltage (VIN).
Ground Current vs. Input
FIGURE 2-6: Voltage (VIN).
Ground Current vs. Input
DS21335E-page 4
(c) 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25C.
Ground Current vs. VIN
80 70 GND CURRENT (A) 60
VOUT (V) 3.5
VOUT vs. VIN
3 2.5 2 1.5 1
VOUT = 3.3V ILOAD = 0
VOUT = 3.3V ILOAD = 150mA
50 40 30 20 10 0
CIN = 1F COUT = 1F
0.5 0
CIN = 1F COUT = 1F
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 2.5 3.5 4.5 5.5 6.5 7 VIN (V)
3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 0.5 1 1.5 5 5.5 6 6.5 7 VIN (V)
FIGURE 2-7: Voltage (VIN).
Ground Current vs. Input
FIGURE 2-10: Output Voltage (VOUT) vs. Input Voltage (VIN).
Output Voltage vs. Temperature
3.320 3.315 3.310 VOUT = 3.3V ILOAD = 10mA
VOUT vs. VIN
3.5 3.0 2.5
VOUT (V)
VOUT = 100mA ILOAD = 3.3V ILOAD = 100mA
3.305
2.0 1.5 1.0 0.5 0.0
0
CIN = 1F COUT = 1F
VOUT (V)
3.300 3.295 3.290 3.285 3.280 3.275 -40 CIN = 1F COUT = 1F VIN = 4.3V -20 -10 0 20 40 TEMPERATURE (C) 85 125
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V)
FIGURE 2-8: Output Voltage (VOUT) vs. Input Voltage (VIN).
Output Voltage vs. Temperature
3.290 3.288 3.286 VOUT (V) 3.284 3.282 3.280 3.278 3.276 3.274
CIN = 1F COUT = 1F VIN = 4.3V VOUT = 3.3V ILOAD = 150mA
FIGURE 2-11: Temperature.
Output Voltage (VOUT) vs.
-40
-20
-10 0 20 40 TEMPERATURE (C)
85
125
FIGURE 2-9: Temperature.
Output Voltage (VOUT) vs.
(c) 2007 Microchip Technology Inc.
DS21335E-page 5
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25C.
Output Voltage vs. Temperature
5.025 5.020 5.015
Output Voltage vs. Temperature
4.994 4.992 4.990 4.988
VOUT (V)
VOUT = 5V ILOAD = 150mA
VOUT = 5V ILOAD = 10mA
VOUT (V)
5.010 5.005 5.000 4.995 4.990 4.985
4.986 4.984 4.982 4.980 4.978 4.976 4.974
CIN = 1F COUT = 1F VIN = 6V
CIN = 1F COUT = 1F VIN = 6V
-40 -20 -10 0 20 40 85 125
-40
-20
TEMPERATURE (C)
-10 0 20 40 TEMPERATURE (C)
85
125
FIGURE 2-12: Temperature.
Output Voltage (VOUT) vs.
FIGURE 2-14: Temperature.
Output Voltage (VOUT) vs.
Temperature vs. Quiescent Current
70 60 VOUT = 5V ILOAD = 10mA
Temperature vs. Quiescent Current
80 70
GND CURRENT (A)
VOUT = 5V ILOAD = 150mA
GND CURRENT (A)
50 40 30 20 10 0 CIN = 1F COUT = 1F VIN = 6V -40 -20 -10 0 20 40 TEMPERATURE (C) 85 125
60 50 40 30 20 10 0
CIN = 1F COUT = 1F VIN = 6V
-40
-20
-10 0 20 40 TEMPERATURE (C)
85
125
FIGURE 2-13:
IGND vs. Temperature.
FIGURE 2-15:
IGND vs. Temperature.
Power Supply Rejection Ratio
-30 -35 -40 -45 IOUT = 10mA VINDC = 4V VINAC = 100mVp-p VOUT = 3V CIN = 0 COUT = 1F
Output Noise vs. Frequency
10.0 RLOAD = 50 COUT = 1F CIN = 1F CBYP = 0 COUT ESR ()
Stability Region vs. Load Current
1000 COUT = 1F to 10F
100 10 1 Stable Region PSRR (dB)
NOISE (V/Hz)
1.0
-50 -55 -60 -65
0.1 0.1 0.0 0.01K 0.1K 0.01 1K 10K 100K 1000K FREQUENCY (Hz) 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA)
-70 -75 -80 0.01K 0.1K 1K 10K 100K 1000K FREQUENCY (Hz)
FIGURE 2-16:
AC Characteristics.
DS21335E-page 6
(c) 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25C.
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA VIN = 4.3V, Temp = 25C, Rise Time = 448S
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25C, Rise Time = 184S
VSHDN
VSHDN
VOUT
VOUT
FIGURE 2-17: Measure Rise Time of 3.3V with Bypass Capacitor.
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 50mA VIN = 4.3V, Temp = 25C, Fall Time = 100S
FIGURE 2-19: Measure Rise Time of 3.3V without Bypass Capacitor.
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25C, Fall Time = 52S
VSHDN
VSHDN
VOUT
VOUT
FIGURE 2-18: Measure Fall Time of 3.3V with Bypass Capacitor.
FIGURE 2-20: Measure Fall Time of 3.3V without Bypass Capacitor.
(c) 2007 Microchip Technology Inc.
DS21335E-page 7
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25C.
Measure Rise Time of 5.0V LDO With Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA VIN = 6V, Temp = 25C, Rise Time = 390S
Measure Rise Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25C, Rise Time = 192S
VSHDN
VSHDN
VOUT
VOUT
FIGURE 2-21: Measure Rise Time of 5.0V with Bypass Capacitor.
Measure Fall Time of 5.0V LDO With Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 50mA VIN = 6V, Temp = 25C, Fall Time = 167S
FIGURE 2-23: Measure Rise Time of 5.0V without Bypass Capacitor.
Measure Fall Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25C, Fall Time = 88S
VSHDN
VSHDN
VOUT
VOUT
FIGURE 2-22: Measure Fall Time of 5.0V with Bypass Capacitor.
FIGURE 2-24: Measure Fall Time of 5.0V without Bypass Capacitor.
DS21335E-page 8
(c) 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25C.
Load Regulation of 3.3V LDO
Conditions: CIN = 1F, COUT = 2.2F, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25C
Load Regulation of 3.3V LDO
Conditions: CIN = 1F, COUT = 2.2F, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25C
ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled
ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled
ILOAD
ILOAD
VOUT
VOUT
FIGURE 2-25: LDO.
Load Regulation of 3.3V
FIGURE 2-27: LDO.
Load Regulation of 3.3V
Load Regulation of 3.3V LDO
Conditions: CIN = 1F, COUT = 2.2F, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25C
Line Regulation of 3.3V LDO
Conditions: VIN = 4V, + 1V Squarewave @2.5kHz
ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled
ILOAD
VIN
VOUT
VOUT
CIN = 0F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled
FIGURE 2-26: LDO.
Load Regulation of 3.3V
FIGURE 2-28: LDO.
Load Regulation of 3.3V
(c) 2007 Microchip Technology Inc.
DS21335E-page 9
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25C.
Thermal Shutdown Response of 5.0V LDO
Conditions: VIN = 6V, CIN = 0F, COUT = 1F
Line Regulation of 5.0V LDO
Conditions: VIN = 6V, + 1V Squarewave @2.5kHz
VIN
VOUT
VOUT
CIN = 0F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled
ILOAD was increased until temperature of die reached about 160C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160C. The regulator remains off until die temperature drops to approximately 150C.
FIGURE 2-29: LDO.
Line Regulation of 5.0V
FIGURE 2-30: Thermal Shutdown Response of 5.0V LDO.
DS21335E-page 10
(c) 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Pin No. (5-Pin SOT-23) 1 2 3
PIN FUNCTION TABLE
Symbol VIN GND SHDN Unregulated supply input. Ground terminal. Shutdown control input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero and supply current is reduced to 0.5 A (maximum). Reference bypass input. Connecting a 470 pF to this input further reduces output noise. Regulated voltage output. Description
4 5
Bypass VOUT
3.1
Input Voltage (VIN)
3.3
Shutdown (SHDN)
Connect the VIN pin to the unregulated source voltage. Like all low dropout linear regulators, low source impedance is necessary for the stable operation of the LDO. The amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. For most applications, 1.0 F of capacitance will ensure stable operation of the LDO circuit. The type of capacitor used can be ceramic, tantalum or aluminum electrolytic. The low Effective Series Resistance (ESR) characteristics of the ceramic will yield better noise and Power Supply Ripple Rejection (PSRR) performance at high frequency.
The Shutdown input is used to turn the LDO on and off. When the SHDN pin is at a logic high level, the LDO output is enabled. When the SHDN pin is pulled to a logic low, the LDO output is disabled. When disabled, the quiescent current used by the LDO is less than 0.5 A max.
3.4
Bypass
3.2
Ground Terminal (GND)
Connecting a low-value ceramic capacitor to the Bypass pin will further reduce output voltage noise and improve the PSRR performance of the LDO. While smaller and larger values can be used, these affect the speed at which the LDO output voltage rises when the input power is applied. The larger the bypass capacitor, the slower the output voltage will rise.
Connect the ground pin to the input voltage return. For the optimal noise and PSRR performance, the GND pin of the LDO should be tied to a quiet circuit ground. For applications have switching or noisy inputs tie the GND pin to the return of the output capacitor. Ground planes help lower inductance and voltage spikes caused by fast transient load currents and are recommended for applications that are subjected to fast load transients.
3.5
Output Voltage (VOUT)
Connect the output load to VOUT of the LDO. Also connect one side of the LDO output capacitor as close as possible to the VOUT pin.
(c) 2007 Microchip Technology Inc.
DS21335E-page 11
TC1014/TC1015/TC1185
4.0 DETAILED DESCRIPTION
4.1 Bypass Input
The TC1014, TC1015 and TC1185 are precision fixed output voltage regulators (if an adjustable version is needed, see the TC1070, TC1071 and TC1187 data sheet (DS21353). Unlike bipolar regulators, the TC1014, TC1015 and TC1185 supply current does not increase with load current. In addition, the LDOs' output voltage is stable using 1 F of capacitance over the entire specified input voltage range and output current range. Figure 4-1 shows a typical application circuit. The regulator is enabled anytime the shutdown input (SHDN) is at or above VIH, and disabled when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, the supply current decreases to 0.05 A (typical) and VOUT falls to zero volts. A 470 pF capacitor connected from the Bypass input to ground reduces noise present on the internal reference, which in turn, significantly reduces output noise. If output noise is not a concern, this input may be left unconnected. Larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied.
4.2
Output Capacitor
+
+ 1 F
VIN
VOUT + 1 F
VOUT
Battery
TC1014 TC1015 TC1185 GND
A 1 F (min) capacitor from VOUT to ground is required. The output capacitor should have an effective series resistance greater than 0.1 and less than 5. A 1 F capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately -30C, solid tantalums are recommended for applications operating below -25C.) When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques.
4.3
Input Capacitor
SHDN
Bypass 470 pF Reference Bypass Cap (Optional)
Shutdown Control (to CMOS Logic or Tie to VIN if unused)
FIGURE 4-1:
Typical Application Circuit.
A 1 F capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and this AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitors can be used (since many aluminum electrolytic capacitors freeze at approximately -30C, solid tantalum is recommended for applications operating below -25C). When operating from sources other than batteries, supplynoise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques.
DS21335E-page 12
(c) 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
5.0
5.1
THERMAL CONSIDERATIONS
Thermal Shutdown
Equation 5-1 can be used in conjunction with Equation 5-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX VOUTMIN ILOADMAX TJMAX TAMAX = = = = = 3.0V +10% 2.7V - 2.5% 40 mA 125C 55C
Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160C. The regulator remains off until the die temperature drops to approximately 150C.
5.2
Power Dissipation
The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst-case actual power dissipation:
Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD (VINMAX - VOUTMIN)ILOADMAX = [(3.0 x 1.1) - (2.7 x .975)]40 x 10-3 = 26.7 mW Maximum allowable power dissipation: ( T JMAX - T AMAX ) P DMAX = ------------------------------------------ JA = ( 125 - 55 ) ------------------------220 = 318 mW In this example, the TC1014 dissipates a maximum of 26.7 mW below the allowable limit of 318 mW. In a similar manner, Equation 5-1 and Equation 5-2 can be used to calculate maximum current and/or input voltage limits.
EQUATION 5-1:
P D ( V INMAX - V OUTMIN )I LOADMAX Where: PD = Worst-case actual power dissipation VINMAX = Maximum voltage on VIN VOUTMIN = Minimum regulator output voltage ILOADMAX = Maximum output (load) current The maximum allowable power dissipation (Equation 5-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (JA). The 5-pin SOT-23 package has a JA of approximately 220C/Watt.
EQUATION 5-2:
( T JMAX - T AMAX ) P DMAX = ------------------------------------------ JA Where all terms are previously defined.
5.3
Layout Considerations
The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower JA and therefore increase the maximum allowable power dissipation limit.
(c) 2007 Microchip Technology Inc.
DS21335E-page 13
TC1014/TC1015/TC1185
6.0
6.1
PACKAGING INFORMATION
TABLE 6-1:
Package Marking Information
(V) 1.8 1234 2.5 2.6 2.7 2.8 2.85 3.0 3.3 3.6 4.0 5.0
PART NUMBER CODE AND TEMPERATURE RANGE
TC1015 Code BY B1 BT B2 BZ B8 B3 B5 B9 B0 B7 TC1185 Code NY N1 NT N2 NZ N8 N3 N5 N9 N0 N7
TC1014 Code AY A1 NB A2 AZ A8 A3 A5 A9 A0 A7
&
represents part number code + temperature range and voltage represents year and 2-month period code represents lot ID number
6.2
Taping Form
Device Marking
User Direction of Feed
PIN 1
W, Width of Carrier Tape
PIN 1
Standard Reel Component Orientation
P,Pitch Reverse Reel Component Orientation
Carrier Tape, Number of Components per Reel and Reel Size Package 5-Pin SOT-23 Carrier Width (W) 8 mm Pitch (P) 4 mm Part Per Full Reel 3000 Reel Size 7 in
DS21335E-page 14
(c) 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
5-Lead Plastic Small Outline Transistor (OT) [SOT-23]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging
b
N
E E1
1 e
2
3
e1 D
A
A2
c
A1
L L1
Units Dimension Limits Number of Pins Lead Pitch Outside Lead Pitch Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Footprint Foot Angle Lead Thickness N e e1 A A2 A1 E E1 D L L1 c 0.90 0.89 0.00 2.20 1.30 2.70 0.10 0.35 0 0.08 MIN MILLIMETERS NOM 5 0.95 BSC 1.90 BSC - - - - - - - - - - 1.45 1.30 0.15 3.20 1.80 3.10 0.60 0.80 30 0.26 MAX
Lead Width b 0.20 - 0.51 Notes: 1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-091B
(c) 2007 Microchip Technology Inc.
DS21335E-page 15
TC1014/TC1015/TC1185
NOTES:
DS21335E-page 16
(c) 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
APPENDIX A: REVISION HISTORY
Revision E (February 2007)
* Section 1.0 "Electrical characteristics": Changed Dropout Voltage from mA to A. * Updated "Product Identification System", page 19. * Updated Section 6.0 "Packaging Information".
Revision D (April 2006)
* Removed "ERROR is open circuited" from SHDN pin description in Pin Function Table. * Added verbiage for pinout descriptions in Pin Function Table. * Replaced verbiage in first paragraph of Section 4.0 Detailed Description. * Added Section 4.3 Input Capacitor
Revision C (January 2006)
* Changed TR suffix to 713 suffix in Taping Form in Package Marking Section
Revision B (May 2002)
* Converted Telcom data sheet to Microchip standard for Analog Handbook
Revision A (February 2001)
* Original Release of this Document under Telcom.
(c) 2007 Microchip Technology Inc.
DS21335E-page 17
TC1014/TC1015/TC1185
NOTES:
DS21335E-page 18
(c) 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device -X.X Output Voltage X Temperature Range XXXXX Package Examples:
a) TC1014-1.8VCT713: 1.8V, 5LD SOT-23, Tape and Reel.
b) TC1014-2.85VCT713: 2.85V, 5LD SOT-23, Tape and Reel. c) TC1014-3.3VCT713: 3.3V, 5LD SOT-23, Tape and Reel. 1.8V, 5LD SOT-23, Tape and Reel.
Device:
TC1014: TC1015: TC1185: 1.8 2.5 2.6 2.7 2.8 2.85 3.0 3.3 3.6 4.0 5.0 V = = = = = = = = = = =
50 mA LDO with Shutdown and VREF Bypass 100 mA LDO with Shutdown and VREF Bypass 150 mA LDO with Shutdown and VREF Bypass
a) TC1015-1.8VCT713:
Output Voltage: 1.8V 2.5V 2.6V 2.7V 2.8V 2.85V 3.0V 3.3V 3.6V 4.0V 5.0V
b) TC1015-2.85VCT713: 2.85V, 5LD SOT-23, Tape and Reel. c) TC1015-3.0VCT713: a) TC1185-1.8VCT713: b) TC1185-2.8VCT713: 3.0V, 5LD SOT-23, Tape and Reel. 1.8V, 5LD SOT-23, Tape and Reel. 2.8V, 5LD SOT-23, Tape and Reel.
Temperature Range: Package:
= -40 C to +125 C
CT713 = Plastic Small Outline Transistor (SOT-23), 5-lead, Tape and Reel
(c) 2007 Microchip Technology Inc.
DS21335E-page 19
TC1014/TC1015/TC1185
NOTES:
DS21335E-page 20
(c) 2007 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices: * * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable."
* *
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Linear Active Thermistor, Migratable Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2007, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
(c) 2007 Microchip Technology Inc.
DS21335E-page 21
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Habour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Fuzhou Tel: 86-591-8750-3506 Fax: 86-591-8750-3521 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 China - Shunde Tel: 86-757-2839-5507 Fax: 86-757-2839-5571 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 China - Xian Tel: 86-29-8833-7250 Fax: 86-29-8833-7256
ASIA/PACIFIC
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EUROPE
Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820
12/08/06
DS21335E-page 22
(c) 2007 Microchip Technology Inc.

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